| PART |
Description |
Maker |
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| QPA1001-EVB |
3.1 ?3.5 GHz 60 Watt GaN Power Amplifier
|
TriQuint Semiconductor
|
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| MJE800T MJE800 MJE702 MJE703 MJE803 MJE700T MJE700 |
From old datasheet system
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
